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SiC Power Semiconductor Market Report Information: By Device SiC Discrete Devices, MOSFET, Diode, Module, SiC Bare Die Devices), Wafer Size (2-inch, 4-inch, 6-inch and above), Application (RF Devices & Cellular Base Stations, Power Supply & Inverter, Power Grids, EV Motors, Industrial Motor Drives, Railway Traction), End User (Telecommunication, Energy & Power, Automotive, Industrial, Electronics), by Region - Global Forecast 2023

SiC Power Semiconductor Market Report Information: By Device SiC Discrete...

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SiC Power Semiconductor Market Report Information: By Device SiC Discrete Devices, MOSFET, Diode, Module, SiC Bare Die Devices), Wafer Size (2-inch, 4-inch, 6-inch and above), Application (RF Devices & Cellular Base Stations, Power Supply & Inverter, Power Grids, EV Motors, Industrial Motor Drives, Railway Traction), End User (Telecommunication, Energy & Power, Automotive, Industrial, Electronics), by Region - Global Forecast 2023
SiC Power Semiconductor Market Report...
Report Code
RO11/111/1007

Publish Date
01/Jan/2019

Pages
133
PRICE
$ 4450/-
This is a single user license, allowing one specific user access to the product. The product is a PDF.
$ 6250/-
This is an enterprise license, allowing all employees within your organization access to the product. The product is a PDF..
SiC Power Semiconductor Market Report Information: By Device SiC Discrete Devices, MOSFET, Diode, Module, SiC Bare Die Devices), Wafer Size (2-inch, 4-inch, 6-inch and above), Application (RF Devices & Cellular Base Stations, Power Supply & Inverter, Power Grids, EV Motors, Industrial Motor Drives, Railway Traction), End User (Telecommunication, Energy & Power, Automotive, Industrial, Electronics), by Region - Global Forecast 2023
Market analysis

Silicon carbide or SiC is a type of compound semiconductor which is favored to a great extent across different industry verticals inferable from various performance benefits offered by them. Properties, for example, higher critical electrical field, higher thermal conductivity, higher operating temperature, and others over its traditional silicon (Si) partner guarantees application in different high-performance frameworks. The developing necessity for improved power management frameworks in the hybrid electric vehicles invigorates the development of the market. Then again, high wafer cost associated with the creation of SiC power semiconductors and complexities identified with configuration are probably going to obstruct the development of the market during the estimated period. The SiC Power Semiconductor Market would grow at a CAGR of 26.3% attaining the valuation of USD 1,359.2 Mn by the end of the forecast period 2018-2023.

Market segmentation

Based on its device, the SiC Power Semiconductor Market is segmented into MOSFET, SiC discrete devices, module, diode, SiC bare die devices. On the basis of its wafer size, the market is bifurcated into 2-inch, 4-inch and 6-inch and above. Based on its application, the market is segmented as Power Supply & Inverter, RF Devices & Cellular Base Stations, Industrial Motor Drives, Power Grids, Railway Traction, EV Motors, Others. Based on its end-user, the market is classified into Energy & Power, Telecommunication, Industrial, Electronics, Automotive, Others.

Regional analysis

Geographically, the SiC Power Semiconductor Market is divided into global regions like Europe, North America, Asia- Pacific, Middle East, LATAM, and Africa.

Major players

Mitsubishi Electric Corporation, STMicroelectronics NV, Cree Inc., Infineon Technologies AG, ON Semiconductor, and Others are the key players in the global SiC power semiconductor market.

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